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  november 2008 rev 6 1/14 14 std6nf10 stu6nf10 n-channel 100 v, 0.22 ? , 6 a, dpak, ipak low gate charge stripfet? power mosfet features exceptional dv /dt capability 100% avalanche tested application switching applications description this power mosfet series realized with stmicroelectronics unique stripfet process has specifically been designed to minimize input capacitance and gate charge. it is therefore suitable as primary switch in advanced high- efficiency, high-frequency isolated dc-dc converters for telecom and computer applications. it is also intended for any applications with low gate drive requirements. figure 1. internal schematic diagram type v dss r ds(on) max i d std6nf10 100 v < 0.250 ? 6 a stu6nf10 100 v < 0.250 ? 6 a dpak 3 2 1 1 3 ipak table 1. device summary order codes marking package packaging STD6NF10T4 d6nf10 dpak tape and reel stu6nf10 6nf10 ipak tube www.st.com
contents std6nf10, stu6nf10 2/14 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
std6nf10, stu6nf10 electrical ratings 3/14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 100 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25 c 6 a i d drain current (continuous) at t c = 100 c 4 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 24 a p tot total dissipation at t c = 25 c 30 w derating factor 0.2 w/c dv/dt (2) 2. i sd 6 a, di/dt 300 a/s, v dd v (br)dss , tj t jmax peak diode recovery voltage slope 40 v/ns e as (3) 3. starting t j = 25 c, i d = 3 a, v dd = 50 v single pulse avalanche energy 200 mj t stg storage temperature -65 to 175 c t j max. operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 5 c/w r thj-amb thermal resistance juncti on-ambient max 100 c/w t j maximum lead temperature for soldering purpose 300 c
electrical characteristics std6nf10, stu6nf10 4/14 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs =0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds =max rating, t c = 125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 3 a 0.22 0.25 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward transconductance v ds = > i d(on) x r ds(on)max, i d =3a 34 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 280 45 20 pf pf pf t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 50 v, i d = 3 a r g =4.7 ?, v gs = 10 v (see figure 13 ) 6 10 20 3 ns ns ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 80 v, i d = 6 a, v gs = 10 v, r g =4.7 ? (see figure 14 ) 10 2.5 4 14 nc nc nc
std6nf10, stu6nf10 electrical characteristics 5/14 table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) 6 24 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 6 a, v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 6 a, di/dt = 100 a/s, v dd = 10 v, t j = 150 c (see figure 15 ) 70 175 5 ns nc a
electrical characteristics std6nf10, stu6nf10 6/14 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. transconductance figure 7. static drain-source on resistance
std6nf10, stu6nf10 electrical characteristics 7/14 figure 8. gate charge vs. gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs. temperature figure 11. normalized on resistance vs. temperature figure 12. source-drain diode forward characteristics
test circuits std6nf10, stu6nf10 8/14 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefo rm figure 18. switching time waveform
std6nf10, stu6nf10 package mechanical data 9/14 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com
package mechanical data std6nf10, stu6nf10 10/14 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 b 0.64 0. 9 0 b 2 0. 9 5 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 e 6.40 6.60 e2.2 8 e1 4.40 4.60 h 16.10 l 9 .00 9 .40 (l1) 0. 8 01.20 l2 0. 8 0 v1 10 o to-251 (ipak) mechanical data 006 8 771_h
std6nf10, stu6nf10 package mechanical data 11/14 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 a2 0.0 3 0.2 3 b 0.64 0. 9 0 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.2 8 e1 4.40 4.60 h 9 . 3 5 10.10 l1 l1 2. 8 0 l2 0. 8 0 l4 0.60 1 r0.20 v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
packing mechanical data std6nf10, stu6nf10 12/14 5 packing mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
std6nf10, stu6nf10 revision history 13/14 6 revision history table 7. document revision history date revision changes 21-jun-2004 3 complete version 20-jul-2006 4 new template, no content change 16-sep-2008 5 corrected part number: stu6nf10 19-nov-2008 6 marking label in table 1 for the device in ipak has been updated. i gss value in table 4 has been updated
std6nf10, stu6nf10 14/14 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2008 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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